july 2009 FDMC15N06 n-channel mosfet ?2009 fairchild semiconductor corporation FDMC15N06 rev. a www.fairchildsemi.com 1 FDMC15N06 n-channel mosfet 55v, 15a, 0.090 ? features ?r ds(on) = 0.075 ? ( typ.)@ v gs = 10v, i d = 15a ? 100% avalanche tested ? rohs compliant description these n-channel power mosfets are manufactured using the innovative uitrafet process. this advanced process technology achieves the lowest possible on -resistance per silicon area, resulting in outstanding performance.this device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. it was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. bottom d d d d s s s g top pin 1 mlp 3.3x3.3 g s s s d d d d 5 6 7 8 3 2 1 4 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 55 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c) 15 a -continuous (t c = 100 o c) 9 - continuous (t a = 25 o c) (note 1a) 2.4 a i dm drain current - pulsed (note 2) 60 a e as single pulsed avalanche energy (note 3) 36 mj i ar avalanche current 15 a e ar repetitive avalanche energy 3.5 mj p d power dissipation (t c = 25 o c) 35 w (t a = 25 o c) 2.3 w t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 3.5 o c/w r ja thermal resistance, junction to ambient (note 1a) 53
FDMC15N06 n-channel mosfet FDMC15N06 rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDMC15N06 FDMC15N06 power 33 13" 12mm 3000 units symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c55 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-70-v/ o c i dss zero gate voltage drain current v ds = 50v, v gs = 0v - - 1 a v ds = 45v, t c = 150 o c - - 250 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 15a - 0.75 0.90 ? g fs forward transconductance v ds = 20v, i d = 15a - 5 -s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 265 350 pf c oss output capacitance - 97 130 pf c rss reverse transfer capacitance - 28 42 pf q g(tot) total gate charge at 10v v ds = 30v,i d = 15a v gs = 10v (note 4) - 8.8 11.5 nc q gs gate to source gate charge - 1.7 - nc q gd gate to drain ?miller? charge - 3.6 - nc t d(on) turn-on delay time v dd = 30v, i d = 15a r g = 25 ? (note 4) -9.529ns t r turn-on rise time - 36.5 83 ns t d(off) turn-off delay time - 22.5 55 ns t f turn-off fall time - 22 54 ns i s maximum continuous drain to source diode forward current - - 15 a i sm maximum pulsed drain to source diode forward current - - 60 a v sd drain to source diode forward voltage v gs = 0v, i sd = 15a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 15a di f /dt = 100a/ s (note 5) -30-ns q rr reverse recovery charge - 35 - nc notes: 1: r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: repetitive rating: pulse width limi ted by maximum junction temperature 3: l = 1mh, i as = 8.5a, r g = 25 ? , starting t j = 25 c 4: essentially independent of operating temperature typical characteristics 5: i sd 15a, di/dt 200a/ s, v dd 40v, starting t j = 25 c a. 53 c/w when mounted on a 1 in 2 pad of 2 oz copper b.125 c/w when mounted on a minimum pad of 2 oz copper
FDMC15N06 n-channel mosfet FDMC15N06 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 5 1 10 50 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 20 v 15 v 10 v 8 v 7 v 6 v 5 v i d , drain current[a] v ds , drain-source voltage[v] 2345678 1 10 50 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 1020304050 0.00 0.05 0.10 0.15 0.20 0.25 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 0 200 400 600 800 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 024681012 0 2 4 6 8 10 *note: i d = 15a v ds = 11v v ds = 30v v ds = 44v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDMC15N06 n-channel mosfet FDMC15N06 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 15a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 4 8 12 16 i d , drain current [a] t c , case temperature [ o c ] 0.1 1 10 100 0.01 0.1 1 10 100 100 s 1ms 100s 100ms 1s 10s 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 single pulse r ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2
FDMC15N06 n-channel mosfet FDMC15N06 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDMC15N06 n-channel mosfet FDMC15N06 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- d = g ate pulse w idth gate pulse period --------------------------
FDMC15N06 n-channel mosfet FDMC15N06 rev. a www.fairchildsemi.com 7 dimensional outline and pad layout
? 2008 fairchild semiconductor corporation www.fairchildsemi.com trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. accupower ? auto-spm ? build it now ? coreplus ? corepower ? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch?* ?* ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore ? fetbench ? flashwriter ? * fps ? f-pfs ? frfet ? global power resource sm green fps ? green fps ? e-series ? g max ? gto ? intellimax ? isoplanar ? megabuck? microcoupler ? microfet ? micropak ? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm ? powertrench ? powerxs? programmable active droop ? qfet ? qs ? quiet series ? rapidconfigure ? ? saving our world, 1mw/w/kw at a time? smartmax? smart start ? spm ? stealth? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 supremos? syncfet? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? trifault detect ? truecurrent ? * serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provi ded in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in t he industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts eit her directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairch ild's quality standards for handling and storage and pr ovide access to fair child's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropr iately address any warranty issues t hat may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from u nauthorized sources. fairchild is committed to combat this glo bal problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design s pecifications for product developmen t. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specific ations. fairchild semiconductor rese rves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specificati ons on a product that is disconti nued by fairchild semiconductor. the datasheet is for reference information only. rev. i41
|
